High-precision 2-8 inch polished silicon wafers in CZ/FZ crystal types with Prime/Test/Dummy grades
2-8 inch thermal oxide silicon wafers with precisely controlled SiO2 layers for IC dielectric and ME
Advanced 4-8 inch SOI silicon wafers with customizable top silicon and BOX layer thickness for RF, p
Polysilicon is grown into rod-shaped monocrystalline silicon ingots via the Czochralski (CZ) method
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