Thermal Oxide Silicon Wafer 2-8 Inch SiO2 Layer Substrate

Our thermal oxide silicon wafer is a specialized semiconductor substrate featuring a uniformly grown silicon dioxide (SiO2) insulating layer on the surface of a high-quality polished silicon base wafer. The thermal oxide silicon wafer is produced through high-temperature thermal oxidation processes in controlled furnace atmospheres, where oxygen or water vapor reacts with the silicon surface at temperatures above 1000 degrees Celsius to grow a dense, high-quality SiO2 layer with precise thickness control across the entire wafer surface.

We manufacture thermal oxide silicon wafers in diameters from 2 inches to 8 inches, using both CZ and FZ base wafers to accommodate different application requirements. The oxide thickness range spans from thin gate-quality oxides of tens of nanometers to thick field oxides exceeding 2 micrometers, all precisely controlled to customer specifications within tight tolerance ranges. We offer both dry oxidation and wet oxidation processes: dry oxidation produces denser oxide films with higher dielectric strength ideal for gate dielectric applications, while wet oxidation enables faster growth rates for thicker oxide layer requirements. The thermally grown SiO2 layer provides excellent electrical insulation properties, superior surface passivation, and effective masking capability for ion implantation and diffusion processes, making the thermal oxide silicon wafer essential for numerous semiconductor fabrication sequences.

Each thermal oxide silicon wafer undergoes rigorous quality verification including oxide thickness measurement using ellipsometry across multiple measurement points, uniformity analysis across the wafer surface, pinhole detection through mercury probe testing, surface particle inspection, and dielectric breakdown voltage testing to ensure reliable insulating performance and consistent electrical properties. The oxide layers feature excellent step coverage, low defect density, and consistent refractive index properties critical for device performance and manufacturing yield. Our thermal oxide silicon wafer products find extensive applications in integrated circuit manufacturing, power device fabrication, MEMS structural layer formation, dielectric layer research, and as base substrates for subsequent thin film deposition and lithography processing steps.

Parameter Category	Specifications
Substrate Diameter	2 inch to 8 inch
Base Wafer	CZ or FZ polished silicon wafer substrate
Oxide Layer Thickness	10 nm (thin gate oxide) to 2 μm (thick field oxide); custom thickness available
Thickness Uniformity	≤ ±3%
Oxidation Process	Dry thermal oxidation, Wet thermal oxidation
Process Features	Dry oxidation: dense film structure, high breakdown voltage — ideal for gate oxide Wet oxidation: fast growth rate — ideal for thick oxide layer fabrication
Breakdown Electric Field	≥ 8 MV/cm
Dielectric Constant	Stable and consistent
Pinhole Density	Extremely low
Substrate Doping	N-type or P-type (optional)
Crystal Orientation	<100> or <111>
Resistivity Range	Wide range available (customizable)
Backside Treatment	Oxide retained; Oxide removed by grinding/polishing; Backside gold metallization
Quality Documentation	Per-batch multi-point oxide thickness test report, uniformity data, electrical performance test results
Applications	IC dielectric layers, power device passivation, MEMS structural layers, semiconductor process R&D, laboratory teaching

As an experienced thermal oxide silicon wafer supplier, we offer both dry oxide and wet oxide growth options, with custom specifications available for base wafer resistivity, crystal orientation, and backside surface treatment including backside oxide removal or metallization options. All thermal oxide silicon wafers are processed and packaged in class 100 cleanroom environments, delivering consistent quality that semiconductor manufacturers and research institutions depend on for their device fabrication and experimental work. We provide flexible order sizes from small R&D quantities to volume production, with full quality documentation and technical support for every batch of thermal oxide silicon wafer products we deliver. We also offer custom oxide patterning and partial oxidation services upon request, enabling customers to obtain pre-processed substrates that accelerate their device development cycles and reduce in-house processing steps.