SiC (Silicon Carbide)

With superior band gap, voltage endurance, thermal conductivity and heat resistance over ordinary silicon, silicon carbide wafers act as irreplaceable core substrates for solid-state LED lighting, high-frequency power devices and electronic products used in high-stress aerospace, military and nuclear energy environments.

Available Grades: Zero MPD、Production、Research Grade、Dummy Grade

Diameter: 50.8 ±0.38 mm；76.2 ±0.38 mm；100±0.5 mm；150±0.25 mm

Thickness: 4H‑N：350 μm±25 μm/ 4H‑SI：500 μm±25 μm

Describe Details

Silicon carbide wafers serve as core substrates for solid-state LED lighting and high-frequency semiconductor device production. Distinct from standard silicon substrates, SiC boasts a substantially broader band gap, faster carrier mobility, greater breakdown voltage and thermal conductivity, coupled with exceptional heat resistance. These exceptional material traits render SiC an indispensable solution for high-temperature, high-voltage, high-frequency, high-power, optoelectronic, radiation-hardened and microwave electronics, as well as harsh-environment applications covering aerospace, military hardware and nuclear facilities.

FAQ

Can I obtain samples?

Yes.

Can I use my own logo or design on the product?

Yes, we can label the products according to your requirements. Both internal and external labels are acceptable.

Do you have a factory?

Yes, we have a factory in Jiangsu. Welcome to visit our company and factory.

What is the production capacity of your factory?

Our main focus is on the product process and production cycle.

When will the shipment be made?

Based on your needs, we will arrange for same day shipment for items in stock, and for items out of stock, we will check the delivery date. Delivery will be made within the delivery time.