Single Crystal

Size: 2, 3, 4, 5, 6, 8 inch Variety: MCZ, CZ, FZ-NTD, FZ Conductive type: N& P Crystal orientation: <100><111><110> Length: 80-300mm

Polished Wafer

Size: 2, 3, 4, 5, 6, 8, 12 inch Varieties: MCZ, CZ, FZ-NTD, FZ Conductive type: N& P Orientation: <100><111><110> Thickness: 100-5000um, special thickness can be customized 25 pieces per box, double-layer vacuum, neutral label, neutral carton.

Oxide Wafer

Oxidized silicon wafers refer to the presence of an oxide layer on the surface of the silicon wafer. The thickness of the oxide layer is determined according to user needs. Generally, there is inventory and regular oxidation furnace tube production. ...

SOI（Silicon-On-Insulator）

SOI (Silicon-On-Insulator) is to bond two silicon wafers with oxide layers grown on them together, and the oxide layer becomes a buried oxide layer. One of the silicon wafers is corroded and polished to become a thin silicon film of the device, and t...

SiC

Silicon carbide is a group IV-IV compound semiconductor material formed by C and Si elements in a 1:1 ratio, and its hardness is second only to diamond. It is a semiconductor material with great development potential, and it is also a high-hardness a...